Monthly Archives: May 2011

Intel Announces Production-Ready 22nm 3-D Tri-Gate Transistor

Yesterday Intel announced its readiness for high-volume manufacturing of 3-D tri-gate (FinFET) transistors. Among other benefits, the tri-gate configuration allows Intel to manufacture higher performance fully-depleted devices without resorting to Silicon-On-Insulator (SOI) wafers. The performance gains quoted by Intel over their own 32nm planar transistor technology are impressive, including a 37% speed increase at low voltage , 18% speed increase at high voltage and 50% or greater power reduction at constant performance. All these performance benefits come with only a 2-3% cost increase.
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