By Mike Hargrove
Most process/device simulation tools are TCAD-based. By this, I mean they share a common platform which connects the process simulator to the device simulator, usually using the same mesh structure. Most all of these TCAD tools are finite-element based, and the 3D final mesh structure is tetrahedral in nature. The mesh structure contains many nodes which define solution points for the numerous complex set of equations required to create the physical structure, in most cases a transistor, and solve for the electrical characteristics of the device. One of the drawbacks of TCAD is the computational time required to arrive at a solution – both process model solution and device electrical solution. A larger modeled area (e.g. multiple transistors and/or an SRAM cell) usually means longer simulation time.
Coventor’s virtual wafer fabrication approach addresses this challenge. Our process modeling platform combines with the statistical device TCAD suite of tools from Gold Standard Simulations, LTD. (GSS) to produce SRAM device-level simulation capability capturing real process-induced statistical variation. The ultimate objective of statistical device modeling is to capture the intrinsic variation of physically relevant process parameters. The combination of Coventor SEMulator3D process modeling capability and GSS statistical TCAD simulator GARAND fulfills this objective.