By: Shi Hao (Jacky) Huang, PhD, Semiconductor Process & Integration Engineer
Nowadays, novel semiconductor technologies have brought complex process flows to the fab. These process flows are needed to support the manufacturing of advanced 3D semiconductor structures. It can be helpful to model process flows, and their effect on a novel device, prior to physical fabrication.
Tagged Coventor, Finite Element Mesh, Finite Element Modeling, Process Development, Process Modeling, Process Simulation, Process Variability, semiconductor process modeling, semiconductor process variation, SEMulator3D, TCAD, TCAD Interface, TCAD Modeling, TCAD Simulation, Voxel mesh, Voxel-based mesh
Coventor in the News
Photonics in Silicon R&D Toward Tb/s
By Ed Korczynski, Sr. Technical Editor, Semiconductor Manufacturing & Design
The client:server computing paradigm colloquially referred to as the “Cloud” results in a need for extremely efficient Cloud server hardware, and from first principles the world can save a lot of energy resources if servers run on photonics instead of electronics. Though the potential for cost-savings is well known, the challenge of developing cost-effective integrated photonics solutions remains. Today, discrete compound-semiconductor chips function as transmitters, multiplexers (MUX), and receivers of photons, while many global organizations pursue the vision of lower-cost integrated silicon (Si) photonics circuits. read more…
Tagged Coventor, integrated photonics, MIT, photonics modeling, Process Development, Process Modeling, Process Variability, Process variation, semiconductor process modeling, SEMulator3D, silicon photonics
By: David Fried, Ph.D., Chief Technology Officer, Semiconductor
Coventor recently assembled an expert panel at IEDM 2016, to discuss changes to BEOL process technology that would be needed to continue dimensional scaling to 7 nm and lower. We asked our panelists questions such as: read more…
Tagged 3D architecture, 5NM, 7 nm, Air Gap technology, BEOL, Coventor, Dielectric, EUV, interconnect, LOW-K DIELECTRICS, nanowires, patterning, Process Integration, RC DELAY, SAQP, Self-Aligned Quadruple Patterning
By: Jimmy Gu, Ph.D., Semiconductor Process & Integration Engineer, Coventor
Universities and other institutions of higher learning play a key role in developing our next generation of semiconductor technologies. Along with the theory of semiconductor technology, our next generation of scientists and engineers must learn about the practical methods used to design and manufacture the latest generation of semiconductor products. read more…
By: Dalong Zhao – Semiconductor Process & Integration Engineering
Yield and cost have always been critical factors for both manufacturers and designers of semiconductor products. Meeting yield and product cost targets is a continuous challenge, due to new device structures and increasingly complex process innovations introduced to achieve improved product performance at each new technology node. Design for manufacturability (DFM) and design process technology co-optimization (DTCO) are widely used techniques that can ensure the successful delivery of both new processes and products in semiconductor manufacturing. In this article, we will discuss how 3D (3 dimensional) DTCO can be used to improve product yield and accelerate product delivery dates in semiconductor manufacturing. read more…
Tagged Coventor, Design Rule Checks, Design Technology Co-Optimization, DRC, DTCO, hotspot, lithography, multi-patterning, Process Development, Process Modeling, Process Simulation, semiconductor process modeling, semiconductor process variation, SEMulator3D
IMEC Partner Technical Week Review
By: Aurélie Juncker, Semiconductor Process & Integration Engineer
a. Fully aligned Via with Cu recess approach – Gayle Murdoch, b. STT-RAM – Davide Crotti, c. N10 Supernova2 process – Matt Gallagher
In March 2016, Coventor was invited to the biannual Partner Technical Week (PTW) at IMEC in Leuven, Belgium. IMEC, a world-leading research group in nanotechnology, organizes their Partner Technical Week every 6 months to present scientific results to their partners. During this week, a number of specialists from IMEC’s many partner companies also discuss their progress in areas related to IMEC’s research. This event brings together a large number of engineers who are specialists in their domain, and provides an interesting forum to leverage the scientific knowledge gained by IMEC and its partners. read more…
Tagged 7 nm, BEOL, Coventor, DOE, DUV, ETCH, EUV, FEOL, i193, lithography, misalignment, multi-patterning, N7, patterning, virtual fabrication
By: Daniel Sieger, Lead Engineer, SEMulator3D Geometry and Michael Hargrove, Semiconductor Process & Integration Engineer
The SEMulator3D software platform has once again been updated and improved with significantly more features, making it the industry leader in semiconductor virtual fabrication. read more…
By Mark Lapedus
Semiconductor Engineering sat down to discuss the foundry business, memory, process technology, lithography and other topics with David Fried, chief technology officer at Coventor, a supplier of predictive modeling tools. What follows are excerpts of that conversation.
SE: Chipmakers are ramping up 16nm/14nm finFETs today, with 10nm and 7nm finFETs just around the corner. What do you see happening at these advanced nodes, particularly at 7nm?
Fried: Most people are predicting evolutionary scaling from 14nm to 10nm to 7nm. It’s doubtful that we will see anything really earth-shattering in these technologies. And so, a lot of the challenges come down to patterning. We are going to see multi-patterning schemes really take hold at more levels. For example, the fins are now based on self-aligned double patterning. People will move into self-aligned quad patterning. The gates are maybe self-aligned double. Now, they will move into self-aligned quad. So, that’s going to be a big expense, because each level is going to have multiple passes and multiple cuts.
read the full article here
Tagged 10NM, 3D NAND, 5NM, ATOMIC-LEVEL VARIABILITY, BEOL, Coventor, DEPOSITION, Directed Self Assembly, DSA, ETCH, EUV, III-V MATERIALS, INTEL, lithography, LOW-K DIELECTRICS, MRAM, multi-patterning, NANOWIRE FETS, RC DELAY, RERAM, SADP, TSMC