lithography

Coventor Adds Device Analysis Capabilities to SEMulator3D 7.0

New in SEMulator3D 7.0:  Powerful new process and device simulation capabilities

 

For Immediate Distribution
For more information, contact:
Toni Sottak
(408) 876-4418,
toni@wiredislandpr.com

 Coventor Adds Device Analysis Capabilities to SEMulator3D 7.0

New Features Enable SEMulator3D Version 7.0 to Address Both Process Modeling and Device Analysis for Better Insight into Advanced Semiconductor Technology Development

CARY, NC– February 28, 2018 – February 26, 2018 – Coventor, Inc., a Lam Research Company, the leading supplier of design automation solutions for semiconductor devices and micro-electromechanical systems (MEMS), today announced the availability of SEMulator3D® 7.0 – the newest version of its semiconductor virtual fabrication platform. With added features, performance improvements, and a new Device Analysis capability, SEMulator3D 7.0 addresses both process and device simulation while lowering the barriers to advanced semiconductor technology development.  The new Device Analysis capability enables seamless understanding of how process changes, process variability, and integration schemes directly impact transistor device performance.   read more…

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What the Experts Think: Delivering the Next 5 Years of Semiconductor Technology

Coventor recently sponsored an expert panel discussion at IEDM 2017 to discuss how we might advance the semiconductor industry into the next generation of technology.  The panel discussed alternative methods to solve fundamental problems of technology scaling, using advances in semiconductor architectures, patterning, metrology, advanced process control, variation reduction, co-optimization and new integration schemes.  Our panel included Rick Gottscho, CTO of Lam Research; Mark Dougherty, vice president of advanced module engineering at GlobalFoundries; David Shortt, technical fellow at KLA-Tencor; Gary Zhang, vice president of computational lithography products at ASML; and Shay Wolfling, CTO of Nova Measuring Instruments.

The Next 5 Years of Semiconductor Technology

L-R: Ed Sperling (moderator), Shay Wolfling, Rick Gottscho, Mark Dougherty, Gary Zhang, David Shortt

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Coventor Unveils New Scientific Findings on Lithography Processing For Improved Semiconductor Scalability and Performance

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At SPIE Advanced Lithography 2017, Coventor Will Present Results of Studies to Increase Density and Yield of Next-Generation Semiconductor Devices

CARY, NC– February 13, 2017 – Coventor®, Inc., the leading supplier of virtual fabrication solutions for semiconductor devices and micro-electromechanical systems (MEMS), will present findings from its research on advanced semiconductor fabrication processes at SPIE Advanced Lithography 2017. The results of these studies provide insight into techniques for advancing the state-of-the-art in semiconductor technology through use of new and emerging photomask, lithography and process technologies. read more…

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Design Process Technology Co-Optimization for Manufacturability

By:   Dalong Zhao – Semiconductor Process & Integration Engineering

Yield and cost have always been critical factors for both manufacturers and designers of semiconductor products.   Meeting yield and product cost targets is a continuous challenge, due to new device structures and increasingly complex process innovations introduced to achieve improved product performance at each new technology node.  Design for manufacturability (DFM) and design process technology co-optimization (DTCO) are widely used techniques that can ensure the successful delivery of both new processes and products in semiconductor manufacturing.   In this article, we will discuss how 3D (3 dimensional) DTCO can be used to improve product yield and accelerate product delivery dates in semiconductor manufacturing. read more…

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IMEC Partner Technical Week Review

IMEC Partner Technical Week Review

By:   Aurélie Juncker, Semiconductor Process & Integration Engineer

a.Fully aligned Via with Cu recess approach - Gayle Murdoch, b. STT-RAM - Davide Crotti, c. N10 Supernova2 process - Matt Gallagher

a. Fully aligned Via with Cu recess approach – Gayle Murdoch, b. STT-RAM – Davide Crotti, c. N10 Supernova2 process – Matt Gallagher

In March 2016, Coventor was invited to the biannual Partner Technical Week (PTW) at IMEC in Leuven, Belgium. IMEC, a world-leading research group in nanotechnology, organizes their Partner Technical Week every 6 months to present scientific results to their partners. During this week, a number of specialists from IMEC’s many partner companies also discuss their progress in areas related to IMEC’s research. This event brings together a large number of engineers who are specialists in their domain, and provides an interesting forum to leverage the scientific knowledge gained by IMEC and its partners. read more…

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Inside Process Technology

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By Mark Lapedus

Semiconductor Engineering sat down to discuss the foundry business, memory, process technology, lithography and other topics with David Fried, chief technology officer at Coventor, a supplier of predictive modeling tools. What follows are excerpts of that conversation.

SE: Chipmakers are ramping up 16nm/14nm finFETs today, with 10nm and 7nm finFETs just around the corner. What do you see happening at these advanced nodes, particularly at 7nm?

Fried: Most people are predicting evolutionary scaling from 14nm to 10nm to 7nm. It’s doubtful that we will see anything really earth-shattering in these technologies. And so, a lot of the challenges come down to patterning. We are going to see multi-patterning schemes really take hold at more levels. For example, the fins are now based on self-aligned double patterning. People will move into self-aligned quad patterning. The gates are maybe self-aligned double. Now, they will move into self-aligned quad. So, that’s going to be a big expense, because each level is going to have multiple passes and multiple cuts.

read the full article here

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7nm Lithography Choices

se_logoBy Mark Lapedus

Chipmakers are ramping up their 16nm/14nm logic processes, with 10nm expected to move into early production later this year. Barring a major breakthrough in lithography, chipmakers are using today’s 193nm immersion and multiple patterning for both 16/14nm and 10nm.

Now, chipmakers are focusing on the lithography options for 7nm. For this, they hope to use a combination of two technologies at 7nm—extreme ultraviolet (EUV) lithography, and 193nm immersion with multi-patterning.

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What’s the Next-Gen Litho Tech? Maybe All of Them

semimd_logoBy Jeff Dorsch

The annual SPIE Advanced Lithography symposium in San Jose, Calif., hasn’t offered a clear winner in the next-generation lithography race. It’s becoming clearer, however, that 193i immersion and extreme-ultraviolet lithography will co-exist in the future, while directed self-assembly, nanoimprint lithography, and maybe even electron-beam direct-write technology will fit into the picture, too.

At the same time, plasma deposition and etching processes are assuming a greater interdependence with 193i, especially when it comes to multiple patterning, such as self-aligned double patterning, self-aligned quadruple patterning, and self-aligned octuple patterning (yes, there is such a thing!).

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