We are very pleased to announce the release of our latest MEMS design software, CoventorMP 1.2. This release has been enriched to improve the accuracy of device models and extend the types of devices that can be modeled. It contains enhanced model construction capabilities, a number of great new analysis functions, some significant performance improvements, advances in 3rd-party support and other exciting new features. read more…
Author Archives: Sandra Liu
By: Jacky Huang and Yu De Chen
As the need to scale transistors to ever-smaller sizes continues to press on technology designers, the impact of parasitic resistance and capacitance can approach or even outpace other aspects of transistor performance, such as fringing capacitance or source drain resistance. The total resistance in a device is comprised of two components: internal resistance (which is essentially channel resistance) and external resistance (which is the combination of source drain resistance and metal contact resistance). As key feature sizes shrink at advanced technology nodes, external resistance plays an increasingly important role. Simulation-based design-technology co-optimization (DTCO) offers us some insight into the sensitivity of FinFET device performance to changes in process flows that impact external resistance. read more…
David Fried, vice president of computational products at Lam Research, examines increasing process variation and interactions between various types of variation, why different approaches are necessary to improve yield and continue scaling.
How to deal with variation, and interactions between various types of variation.
[Video Attribution: Semiconductor Engineering]
By: Yu De Chen, Jacky Huang
Driven by Moore’s law, memory and logic semiconductor manufacturers pursue higher transistor density to improve product cost and performance . In NAND Flash technologies, this has led to the market dominance of 3D structures instead of 2D planar devices. Device density can be linearly increased by increasing stack layer counts in a 3D NAND device . At the same time, patterning scheme optimization can also enhance 3D NAND effective device density. In this discussion, we will analyze various patterning schemes for staircase and slit structures at different TCAT (Terabit Cell Array Transistor) 3D NAND nodes. We will compare these schemes to understand their impact on effective transistor density. The schemes and data used in this study are based upon (or inferred from) tear down reports published by TechInsights®. Variations in patterning schemes, and the resulting virtual structures, were modeled using the SEMulator3D® semiconductor platform. read more…
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Coventor Adds Process Optimization Features to SEMulator3D® 8.0
New Features Enable SEMulator3D 8.0 to Address Both Process Modeling and Device Analysis for Better Insight into Advanced Semiconductor Technology Development
David Fried, vice president of computational products at Lam Research, looks at shrinking tolerances at advanced processes, how that affects variation in semiconductor manufacturing, and what can be done to achieve the benefits of scaling without moving to new transistor architectures.
Coventor is exhibiting!