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January 29, 2020
Published by
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January 29, 2020
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Coventor Blog
Identifying DRAM Failures Caused by Leakage Current and Parasitic Capacitance
Leakage current has been a leading cause of device failure in DRAM design, starting with the 20nm technology node. Problems with leakage current in DRAM design can lead to reliability
[…]
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