Figure 4 displays 3D models of FinFET devices using both damascene flow and physical vapor deposition processes. The models just display the points at which resistance is measured on the P and N channels. Underneath the 3D models, a table is displayed that compares the damascene and PVD resistance values for the P & N channels, with a 67% percentage decrease in resistance shown using IBE/PVD compared to damascene deposition.