Figure 2: A cross section view of a GAA FET virtual model. This figure displays the effect on residual SiGe as the lateral ratio is varied from 1 to 1.4 while the channel width is increased from a nominal value of 30 nm to a value of 42 nm. As can be seen in the side views on the right compared to the case in Figure 1, much higher lateral ratios are required to completely etch all of the SiGe between the nanosheets.