7nm Fab Challenges

By Mark Lapedus

Leading-edge foundry vendors have made the challenging transition from traditional planar processes into the finFET transistor era.

The first finFETs were based on the 22nm node, and now the industry is ramping up 16nm/14nm technologies. Going forward, the question is how far the finFET can be scaled.

In fact, 10nm finFETs from Samsung are expected to ramp by year’s end. The challenges for 10nm finFETs are basically known.

A 7nm finFET is expected to be an evolutionary extension of 16nm/14nm and 10nm finFETs. Chipmakers aren’t expected to make any radical changes with the structures or materials at 7nm.

read the full article here.

This entry was posted in Press Coverage. Bookmark the permalink.

Comments are closed.