5NM

What the Experts Think: Delivering the Next 5 Years of Semiconductor Technology

Coventor recently sponsored an expert panel discussion at IEDM 2017 to discuss how we might advance the semiconductor industry into the next generation of technology.  The panel discussed alternative methods to solve fundamental problems of technology scaling, using advances in semiconductor architectures, patterning, metrology, advanced process control, variation reduction, co-optimization and new integration schemes.  Our panel included Rick Gottscho, CTO of Lam Research; Mark Dougherty, vice president of advanced module engineering at GlobalFoundries; David Shortt, technical fellow at KLA-Tencor; Gary Zhang, vice president of computational lithography products at ASML; and Shay Wolfling, CTO of Nova Measuring Instruments.

The Next 5 Years of Semiconductor Technology

L-R: Ed Sperling (moderator), Shay Wolfling, Rick Gottscho, Mark Dougherty, Gary Zhang, David Shortt

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BEOL Barricades: Navigating Future Yield, Reliability and Cost Challenges

By: David Fried, Ph.D., Chief Technology Officer, Semiconductor

Figure 1. M2-V1 process flow after (a) M2-L1 lithography, (b) M2-L2 litho, (c) V1 partial etch, (d) BLok open and (e) CuBS.

Coventor recently assembled an expert panel at IEDM 2016, to discuss changes to BEOL process technology that would be needed to continue dimensional scaling to 7 nm and lower. We asked our panelists questions such as: read more…

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Inside Process Technology

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By Mark Lapedus

Semiconductor Engineering sat down to discuss the foundry business, memory, process technology, lithography and other topics with David Fried, chief technology officer at Coventor, a supplier of predictive modeling tools. What follows are excerpts of that conversation.

SE: Chipmakers are ramping up 16nm/14nm finFETs today, with 10nm and 7nm finFETs just around the corner. What do you see happening at these advanced nodes, particularly at 7nm?

Fried: Most people are predicting evolutionary scaling from 14nm to 10nm to 7nm. It’s doubtful that we will see anything really earth-shattering in these technologies. And so, a lot of the challenges come down to patterning. We are going to see multi-patterning schemes really take hold at more levels. For example, the fins are now based on self-aligned double patterning. People will move into self-aligned quad patterning. The gates are maybe self-aligned double. Now, they will move into self-aligned quad. So, that’s going to be a big expense, because each level is going to have multiple passes and multiple cuts.

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7nm Lithography Choices

se_logoBy Mark Lapedus

Chipmakers are ramping up their 16nm/14nm logic processes, with 10nm expected to move into early production later this year. Barring a major breakthrough in lithography, chipmakers are using today’s 193nm immersion and multiple patterning for both 16/14nm and 10nm.

Now, chipmakers are focusing on the lithography options for 7nm. For this, they hope to use a combination of two technologies at 7nm—extreme ultraviolet (EUV) lithography, and 193nm immersion with multi-patterning.

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