August 18, 2022
Introduction BEOL metal line RC delay has become a dominant factor that limits chip performance at advanced nodes [1]. Smaller metal line pitches require a narrower line CD and line-to-line […]
April 26, 2022
![Figure 2: Schematic view of standard CMOS including an electro-mechanical switch monolithically integrated into BEOL [2]. Courtesy: University of California, Berkeley](https://www.coventor.com/wp-content/uploads/2022/04/Figure-2-April-2022-MEMS-Blog-for-Coventor-website.png)
The First Computers: Electro-Mechanical Computing The first computers were built using electro-mechanical components, unlike today’s modern electronic systems. Alain Turing’s cryptanalysis multiplier and Konrad Zuse’s Z2 were invented and built […]
April 15, 2022
One of the fastest ways to predict semiconductor manufacturing final results is by adding together the results of performing individual process steps. Unfortunately, this prediction might ignore critical defects that […]
March 14, 2022
Introduction As we approach the 1.5nm node and beyond, new BEOL device integration challenges will be presented. These challenges include the need for smaller metal pitches, along with support for […]
December 3, 2021
The Effect of Pattern Loading on BEOL Yield and Reliability during Chemical Mechanical Planarization
CMP (Chemical mechanical planarization) is required during semiconductor processing of many memory and logic devices. CMP is used to create planar surfaces and achieve uniform layer thickness during semiconductor manufacturing, […]
April 17, 2020
Using failure bin classification, yield prediction and process window optimization to predict and enhance yield Device yield is highly dependent upon proper process targeting and variation control of fabrication steps, […]
October 18, 2017
Reducing back-end-of-line (BEOL) interconnect parasitic capacitance remains a focus for advanced technology node development. Porous low-k dielectric materials have been used to achieve reduced capacitance, however, these materials remain fragile […]
May 17, 2017
Until EUV lithography becomes a reality, multiple patterning technologies such as triple litho-etch (LELELE), self-aligned double patterning (SADP), and self-aligned quadruple patterning (SAQP) are being used to meet the stringent […]
April 12, 2017
Things were easy for integrators when the pattern they had on the mask ended up being the pattern they wanted on the chip. Multi-patterning schemes such as Self-Aligned Double Patterning […]
February 13, 2017
At SPIE Advanced Lithography 2017, Coventor Will Present Results of Studies to Increase Density and Yield of Next-Generation Semiconductor Devices CARY, NC– February 13, 2017 – Coventor®, Inc., the leading […]