New integration and patterning schemes used in 3D memory and logic devices have created manufacturing and yield challenges. Industrial focus has shifted from the scaling of predictable unit processes in […]
In a DRAM structure, the charging and discharging process of capacitor-based memory cells is directly controlled by the transistor [1].With transistor sizes approaching the lower limits of physical achievability, manufacturing […]
Leakage current has been a leading cause of device failure in DRAM design, starting with the 20nm technology node. Problems with leakage current in DRAM design can lead to reliability […]