Process Integration

Coventor Adds Device Analysis Capabilities to SEMulator3D 7.0

New in SEMulator3D 7.0:  Powerful new process and device simulation capabilities

 

For Immediate Distribution
For more information, contact:
Toni Sottak
(408) 876-4418,
toni@wiredislandpr.com

 Coventor Adds Device Analysis Capabilities to SEMulator3D 7.0

New Features Enable SEMulator3D Version 7.0 to Address Both Process Modeling and Device Analysis for Better Insight into Advanced Semiconductor Technology Development

CARY, NC– February 28, 2018 – February 26, 2018 – Coventor, Inc., a Lam Research Company, the leading supplier of design automation solutions for semiconductor devices and micro-electromechanical systems (MEMS), today announced the availability of SEMulator3D® 7.0 – the newest version of its semiconductor virtual fabrication platform. With added features, performance improvements, and a new Device Analysis capability, SEMulator3D 7.0 addresses both process and device simulation while lowering the barriers to advanced semiconductor technology development.  The new Device Analysis capability enables seamless understanding of how process changes, process variability, and integration schemes directly impact transistor device performance.   read more…

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CMOS Image Sensors (CIS): Past, Present & Future

By: Sofiane Guissi, Semiconductor Process & Integration Engineer, Coventor

Over the last decade, CMOS Image Sensor (CIS) technology has made impressive progress. Image sensor performance has dramatically improved over the years, and CIS technology has enjoyed great commercial success since the introduction of mobile phones using on-board cameras. Many people, including scientists and marketing specialists, predicted 15 years earlier that CMOS image sensors were going to completely displace CCD imaging devices, in the same way that CCD devices displaced video capture tubes during the mid-1980’s. Although CMOS has a strong position in imaging today, it has not totally displaced CCD devices. On the other hand, the drive into CMOS technology has drastically increased the overall imaging market. CMOS image sensors have not only created new product applications, but have also boosted the performance of CCD imaging devices as well. In this paper, we describe the state-of-the-art in CMOS image sensor technology and discuss future perspectives.

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What drives SADP BEOL variability?

By: Michael Hargrove, Semiconductor Process & Integration Engineer

Until EUV lithography becomes a reality, multiple patterning technologies such as triple litho-etch (LELELE), self-aligned double patterning (SADP), and self-aligned quadruple patterning (SAQP) are being used to meet the stringent patterning demands of advanced back-end-of-line (BEOL) technologies.  For the 7nm technology node, patterning requirements include a metal pitch of 40nm or less. This narrow pitch requirement forces the use of spacer based pitch multiplication techniques. Unfortunately, these techniques have high process/lithography variability, which can severely impact RC and overall device performance.

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AIM Photonics Welcomes Coventor as Newest Member

 

 

 

 

For Immediate Release: March 16, 2017

Contact:
Laura Magee (ESD) | laura.magee@esd.ny.gov | (716) 846-8239 | (800) 260-7313
ESD Press Office | PressOffice@esd.ny.gov | (800) 260-7313
Steve Ference (AIM) | sference@sunypoly.edu | 518-956-7319

CUS-Backed Initiative Taps Process Modeling Specialist to Enable Manufacturing of High-Yield, High-Performance Integrated Photonic Designs

Today’s Announcement Builds On Progress Of Finger Lakes Forward, The Region’s Award-Winning Strategic Plan To Generate Robust Economic Growth And Community Development

ROCHESTER, NY and CARY, NCThe American Institute for Manufacturing Integrated Photonics (AIM Photonics), a public-private partnership advancing the nation’s photonics manufacturing capabilities, and Coventor®, Inc., a semiconductor process modeling software company, today announced Coventor as the newest member of AIM Photonics. Coventor will provide access to its unique, physics-driven 3D modeling technology to improve the performance and manufacturability of complex, integrated photonic designs. read more…

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Semiconductor Process Development: Finding a Faster Way to Profitability

By: Katherine Gambino, Strategic Accounts Manager

Intel Fab

Building a chip fabrication facility requires billions of dollars in investment for land, buildings, processing equipment, chemical and hazardous material safety, not to mention the deployment of hundreds of highly experienced process engineering and manufacturing personnel. Bringing up an advanced semiconductor process in any fab, new or established, is a several-hundred-million dollar effort, typically requiring two or more years of experimentation with process equipment and process recipes, led by engineers with years of process integration and chip manufacturing expertise.

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BEOL Barricades: Navigating Future Yield, Reliability and Cost Challenges

By: David Fried, Ph.D., Chief Technology Officer, Semiconductor

Figure 1. M2-V1 process flow after (a) M2-L1 lithography, (b) M2-L2 litho, (c) V1 partial etch, (d) BLok open and (e) CuBS.

Coventor recently assembled an expert panel at IEDM 2016, to discuss changes to BEOL process technology that would be needed to continue dimensional scaling to 7 nm and lower. We asked our panelists questions such as: read more…

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Asymmetric variability issues could impact 7nm processes

By Luke Collins, Tech Design Forum

Tech Design Forum Logo

New variability issues highlighted by a massive process simulation exercise could make it more difficult than expected to achieve the performance advantages of emerging 7nm and 5nm processes.

Nano-electronics research centre imec has worked with Coventor to simulate the process variability of its 7nm BEOL fabrication processes using Coventor’s SEMulator3D virtual fabrication platform. The simulation of a full process window, looking at how multiple parameters of multiple processes interact, would have taken one million wafers to complete using conventional methods.

read the full article here

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Intel Announces Production-Ready 22nm 3-D Tri-Gate Transistor

Yesterday Intel announced its readiness for high-volume manufacturing of 3-D tri-gate (FinFET) transistors. Among other benefits, the tri-gate configuration allows Intel to manufacture higher performance fully-depleted devices without resorting to Silicon-On-Insulator (SOI) wafers. The performance gains quoted by Intel over their own 32nm planar transistor technology are impressive, including a 37% speed increase at low voltage , 18% speed increase at high voltage and 50% or greater power reduction at constant performance. All these performance benefits come with only a 2-3% cost increase.
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