September 23, 2020
Fig 5: ALD thickness dependence and layer etch. Using profiled anisotropic etching of the SiO2 (blue) and SiN (green), the resulting hole shape can be determined using varying ALD thicknesses. The best shape is found at a 23.5 nm ALD value, using a Semulator 3D visibility etch model that was previously validated again actual etch results.

Accelerating the Development of Dry Etch Processes during Feature Dependent Etch

In dry etching, the trajectory of accelerated ions is non-uniform and non-vertical, due to collisions with gas molecules and other random thermal effects (Figure 1). This has an impact on […]
August 24, 2020
Figure 2: Example of a device package.

Understanding Advanced Packaging Technologies and Their Impact on the Next Generation of Electronics

Chip packaging has expanded from its conventional definition of providing protection and I/O for a discrete chip, to encompassing a growing number of schemes for interconnecting multiple types of chips. […]
July 21, 2020
Figure 4: SEMulator3D model of the Spacer 1 Oxide Fin CD after PMC.   The oxide spacer is turquoise, and the red etch stop layer is amorphous silicon. TEM image with the SEMulator3D image aligned to show visual comparison. Note that sidewall angle and line to line measurements can be used with Process Model Calibration to tune for the deformation caused by the mandrel removal.  

Process Model Calibration: The Key to Building Predictive and Accurate 3D Process Models

Process engineers and integrators can use virtual process modeling to test alternative process schemes and architectures without relying on wafer-based testing. One important aspect of building an accurate process model […]
June 29, 2020

Semiconductor Memory Evolution and Current Challenges

The very first all-electronic memory was the Williams-Kilburn tube, developed in 1947 at Manchester University. It used a cathode ray tube to store bits as dots on the screen’s surface. […]
May 26, 2020
Fig 1: Geometrical CFET evolution from a 2 Nanowires-On- 2 Fins architecture to 2 Nanosheets-On- 2 Nanosheets architecture (NW: Nanowire, NS: Nanosheet, S: Source, D: Drain)

Introducing Nanosheets into Complementary-Field Effect Transistors (CFET)

UNDERSTANDING THE BENEFITS AND CHALLENGES OF A NEW, NEXT-GENERATION SEMICONDUCTOR ARCHITECTURE In our November 2019 blog [1], we discussed using virtual fabrication (SEMulator3D®) to benchmark different process integration options for […]
January 29, 2020
Fig. 1 (a) DRAM Memory Cell, (b) GIDL in Cell Transistor, (c) Dielectric leakage between BLC and SNC, (d) Dielectric leakage at DRAM Capacitor

Identifying DRAM Failures Caused by Leakage Current and Parasitic Capacitance

Leakage current has been a leading cause of device failure in DRAM design, starting with the 20nm technology node. Problems with leakage current in DRAM design can lead to reliability […]
December 16, 2019
Figure 3. Results of etch process applied against base structure (b, middle). The base structure displayed the expected etch results, while the structure with the larger initial opening (c, right) has unexpected topology at the bottom of the structure. The structure with the smaller opening and higher stair shape (a, left) experienced a reduced final etch opening and etch depth (compared to the base structure (b)) at the completion of the modeled etch process.

An Introduction to Semiconductor Process Modeling: Process Specification and Rule Verification

Semiconductor process engineers would love to develop successful process recipes without the guesswork of repeated wafer testing. Unfortunately, developing a successful process can’t be done without some work. This blog […]
July 31, 2019
Top view of slit and channel hole at different nodes

Advanced Patterning Techniques for 3D NAND Devices

Driven by Moore’s law, memory and logic semiconductor manufacturers pursue higher transistor density to improve product cost and performance [1]. In NAND Flash technologies, this has led to the market […]
July 8, 2019
New in SEMulator3D 8.0, powerful new process simulation and analytics capabilities accelerate semiconductor technology development and Design-Technology Co-Optimization (DTCO).

Coventor Adds Process Optimization Features to SEMulator3D 8.0

New Features Enable SEMulator3D 8.0 to Address Both Process Modeling and Device Analysis for Better Insight into Advanced Semiconductor Technology Development
June 25, 2019
Lam Semiconductor Equipment

Controlling Variability using Semiconductor Process Window Optimization

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