Figure 1 Once the model is set up, it results in the capacitor contact as shown. At this point, electrical analysis can be undertaken and the edge effect of the capacitor investigated
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Whitepaper: Advances in 3D CMOS Image Sensors Optical Modeling: Combining Realistic Morphologies with FDTD

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This paper describes an innovative methodology to investigate the relationship between device morphology and the optical performance of CMOS image sensors. By coupling a FDTD-based 3D Maxwell solver with silicon-accurate process modeling software, we have been able to analyze the sensitivity of image sensor quantum efficiency with respect to statistical variations in nm-scale device topology.

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