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  • Process Modeling Exploration for 8 nm Half-Pitch Interconnects

    Read more - Process Modeling Exploration for 8 nm Half-Pitch Interconnects
    8nm HP

    Process Modeling Exploration for 8 nm Half-Pitch Interconnects

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  • N7 FinFET Self-Aligned Quadruple Patterning Modeling

    Read more - N7 FinFET Self-Aligned Quadruple Patterning Modeling
    Process-Flow-of-SAQP-Fin-Patterning

    N7 FinFET Self-Aligned Quadruple Patterning Modeling

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  • Self-Aligned Block and Fully Self-Aligned Via for iN5 Metal 2 Self-Aligned Quadruple Patterning

    Read more - Self-Aligned Block and Fully Self-Aligned Via for iN5 Metal 2 Self-Aligned Quadruple Patterning

    Self-Aligned Block and Fully Self-Aligned Via for iN5 Metal 2 Self-Aligned Quadruple Patterning

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  • Modeling of Tone Inversion Process Flow for N5 Interconnect to Characterize Block Tip to Tip

    Read more - Modeling of Tone Inversion Process Flow for N5 Interconnect to Characterize Block Tip to Tip
    X-section representation of 2 level metal structure

    Modeling of Tone Inversion Process Flow for N5 Interconnect to Characterize Block Tip to Tip

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  • Understanding how small variations in photoresist shape significantly impact multi-patterning yield

    Read more - Understanding how small variations in photoresist shape significantly impact multi-patterning yield
    fin-patterning-for-FinFETs

    Understanding how small variations in photoresist shape significantly impact multi-patterning yield

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  • Optimizing DRAM Development using Directed Self-Assembly (DSA)

    Read more - Optimizing DRAM Development using Directed Self-Assembly (DSA)
    Selection of steps of the SAQP process for patterning the 20-deg active area

    Optimizing DRAM Development using Directed Self-Assembly (DSA)

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  • Self-aligned quadruple patterning to meet requirements for fins with high density

    Read more - Self-aligned quadruple patterning to meet requirements for fins with high density
    top view of pattern obtained by CDSEM after SAQP, contour map and analysis of the pitch walk over a complete wafer based on CDSEM data

    Self-aligned quadruple patterning to meet requirements for fins with high density

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  • Defect Evolution in Next Generation, Extreme Ultraviolet Lithography

    Read more - Defect Evolution in Next Generation, Extreme Ultraviolet Lithography
    Multilayer stack

    Defect Evolution in Next Generation, Extreme Ultraviolet Lithography

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  • Back-End-of-Line (BEOL) Virtual Patterning

    Read more - Back-End-of-Line (BEOL) Virtual Patterning
    M2 Cu cross-section area analysis and graphical results

    Back-End-of-Line (BEOL) Virtual Patterning

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