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Figure 2: (a) Layout design, (b) Top view of a typical metal line generated, (c) cross sectional view of the metal line, (d) LER status of RMS and Correlation length split.
A Study of the Impact of Line Edge Roughness on Metal Line Resistance using Virtual Fabrication
August 18, 2022
Figure 2. Virtual metrology results for minimum and maximum area.

Figure 2. Virtual metrology results for minimum and maximum area.

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Whitepaper: Pathfinding by process window modeling: Advanced DRAM capacitor patterning process window evaluation using virtual fabrication

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In advanced DRAM, capacitors with closely packed patterning are designed to increase cell density. Thus, advanced patterning schemes, such as multiple litho-etch, SADP and SAQP processes may be needed. In this paper, we systematically evaluate a DRAM capacitor hole formation process that includes SADP and SAQP patterning, using virtual fabrication and statistical analysis in SEMulator3D®. The purpose of this analysis is to obtain a quantified process window comparison between the SADP and SAQP patterning schemes.

© 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

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Related posts

Figure 2: (a) Layout design, (b) Top view of a typical metal line generated, (c) cross sectional view of the metal line, (d) LER status of RMS and Correlation length split.

Figure 2: (a) Layout design, (b) Top view of a typical metal line generated, (c) cross sectional view of the metal line, (d) LER status of RMS and Correlation length split.

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Read more - Evaluating the Impact of STI Recess Profile Control on Advanced FinFET Device Performance
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Figure 3: On/off-state current distribution at fin bottom (top figures: no residue; bottom figure: with residue).

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