• Skip to main content
  • LOG IN
  • REGISTER
Coventor_New_LogoCoventor_New_LogoCoventor_New_LogoCoventor_New_Logo
  • COMPANY
    • ABOUT
    • CAREERS
    • PRESS RELEASE
    • PRESS COVERAGE
    • EVENTS
  • PRODUCTS
    • SEMulator3D®
      Semiconductor Process Modeling
    • CoventorMP®
      MEMS Design Automation
      • CoventorWare®
      • MEMS+®
  • SOLUTIONS
    • SEMICONDUCTOR SOLUTIONS
    • MEMS SOLUTIONS
  • RESOURCES
    • CASE STUDIES
    • BLOG
    • VIDEOS
  • CONTACT
  • SUPPORT
Contact Us
✕
  • Home
  • Etch

  • A Study of the Impact of Line Edge Roughness on Metal Line Resistance using Virtual Fabrication

    Read more - A Study of the Impact of Line Edge Roughness on Metal Line Resistance using Virtual Fabrication
    Figure 2: (a) Layout design, (b) Top view of a typical metal line generated, (c) cross sectional view of the metal line, (d) LER status of RMS and Correlation length split.
    A Study of the Impact of Line Edge Roughness on Metal Line Resistance using Virtual Fabrication

  • Evaluating the Impact of STI Recess Profile Control on Advanced FinFET Device Performance

    Read more - Evaluating the Impact of STI Recess Profile Control on Advanced FinFET Device Performance
    Fig. 3: Leakage current distribution from different directions.
    Evaluating the Impact of STI Recess Profile Control on Advanced FinFET Device Performance

  • The Effects of Poly Corner Etch Residue on Advanced FinFET Device Performance

    Read more - The Effects of Poly Corner Etch Residue on Advanced FinFET Device Performance
    Figure 3: On/off-state current distribution at fin bottom (top figures: no residue; bottom figure: with residue).
    The Effects of Poly Corner Etch Residue on Advanced FinFET Device Performance

  • A Study of Wiggling AA Modeling and its Impact on Device Performance in Advanced DRAM

    Read more - A Study of Wiggling AA Modeling and its Impact on Device Performance in Advanced DRAM
    wiggling AA figure
    A Study of Wiggling AA Modeling and its Impact on Device Performance in Advanced DRAM

  • Impact of EUV Resist Thickness on Local Critical Dimension Uniformities for <30 nm CD Via Patterning

    Read more - Impact of EUV Resist Thickness on Local Critical Dimension Uniformities for <30 nm CD Via Patterning
    SOC_L
    Impact of EUV Resist Thickness on Local Critical Dimension Uniformities for <30 nm CD Via Patterning

  • New Techniques to Analyze and Reduce Etch Variation

    Read more - New Techniques to Analyze and Reduce Etch Variation
    ARDE lags as a function of silicon trench width
    New Techniques to Analyze and Reduce Etch Variation

  • Evaluating MEMS Device Virtual Metrology & DRIE

    Read more - Evaluating MEMS Device Virtual Metrology & DRIE
    drie-profile
    Evaluating MEMS Device Virtual Metrology & DRIE

Product Information

  • Product Offerings
  • Technical Support & Training
  • Licensing
  • System Requirements

Resources

  • Blog
  • Case Studies
  • Videos
  • 2018 MEMS Design Contest

Company

  • About
  • Press
  • Partners & Programs
  • Contact
© Copyright Coventor Inc., A Lam Research Company, All Rights Reserved
Privacy Policy • Terms of Use
Contact Us
  • LOG IN
  • REGISTER