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  • Pathfinding by process window modeling: Advanced DRAM capacitor patterning process window evaluation using virtual fabrication

    Read more - Pathfinding by process window modeling: Advanced DRAM capacitor patterning process window evaluation using virtual fabrication
    Figure 2. Virtual metrology results for minimum and maximum area.

    Pathfinding by process window modeling: Advanced DRAM capacitor patterning process window evaluation using virtual fabrication

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  • A Study of the Impact of Line Edge Roughness on Metal Line Resistance using Virtual Fabrication

    Read more - A Study of the Impact of Line Edge Roughness on Metal Line Resistance using Virtual Fabrication
    Figure 2: (a) Layout design, (b) Top view of a typical metal line generated, (c) cross sectional view of the metal line, (d) LER status of RMS and Correlation length split.

    A Study of the Impact of Line Edge Roughness on Metal Line Resistance using Virtual Fabrication

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  • Process Variation Analysis of Device Performance Using Virtual Fabrication: Methodology Demonstrated on a CMOS 14-nm FinFET Vehicle

    Read more - Process Variation Analysis of Device Performance Using Virtual Fabrication: Methodology Demonstrated on a CMOS 14-nm FinFET Vehicle
    Fig. 4. Model calibration based on TEM cross sections for (a) fin self-aligned double patterning, (b) source/drain epitaxial growth and contacts, and (c) gate-to-source/drains spacers.

    Process Variation Analysis of Device Performance Using Virtual Fabrication: Methodology Demonstrated on a CMOS 14-nm FinFET Vehicle

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  • Process Window Optimization of DRAM by Virtual Fabrication

    Read more - Process Window Optimization of DRAM by Virtual Fabrication

    Process Window Optimization of DRAM by Virtual Fabrication

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  • Process Model Calibration: The Key to Building Predictive and Accurate 3D Process Models

    Read more - Process Model Calibration: The Key to Building Predictive and Accurate 3D Process Models

    Process Model Calibration: The Key to Building Predictive and Accurate 3D Process Models

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  • A Benchmark Study of Complementary-Field Effect Transistor (CFET) Process Integration Options done by Virtual Fabrication

    Read more - A Benchmark Study of Complementary-Field Effect Transistor (CFET) Process Integration Options done by Virtual Fabrication

    A Benchmark Study of Complementary-Field Effect Transistor (CFET) Process Integration Options done by Virtual Fabrication

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  • A Benchmark Study of Complementary-Field Effect Transistor (CFET) Process Integration Options: Comparing Bulk vs. SOI vs. DSOI Starting Substrates

    Read more - A Benchmark Study of Complementary-Field Effect Transistor (CFET) Process Integration Options: Comparing Bulk vs. SOI vs. DSOI Starting Substrates

    A Benchmark Study of Complementary-Field Effect Transistor (CFET) Process Integration Options: Comparing Bulk vs. SOI vs. DSOI Starting Substrates

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  • Speeding Up Process Optimization with Virtual Processing

    Read more - Speeding Up Process Optimization with Virtual Processing
    Figure 1 Once the model is set up, it results in the capacitor contact as shown. At this point, electrical analysis can be undertaken and the edge effect of the capacitor investigated

    Speeding Up Process Optimization with Virtual Processing

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