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  • A Study of the Impact of Line Edge Roughness on Metal Line Resistance using Virtual Fabrication

    Read more - A Study of the Impact of Line Edge Roughness on Metal Line Resistance using Virtual Fabrication
    Figure 2: (a) Layout design, (b) Top view of a typical metal line generated, (c) cross sectional view of the metal line, (d) LER status of RMS and Correlation length split.

    A Study of the Impact of Line Edge Roughness on Metal Line Resistance using Virtual Fabrication

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  • A Benchmark Study of Complementary-Field Effect Transistor (CFET) Process Integration Options: Comparing Bulk vs. SOI vs. DSOI Starting Substrates

    Read more - A Benchmark Study of Complementary-Field Effect Transistor (CFET) Process Integration Options: Comparing Bulk vs. SOI vs. DSOI Starting Substrates

    A Benchmark Study of Complementary-Field Effect Transistor (CFET) Process Integration Options: Comparing Bulk vs. SOI vs. DSOI Starting Substrates

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  • Backside Power Delivery as a Scaling Knob for Future Systems

    Read more - Backside Power Delivery as a Scaling Knob for Future Systems
    Figure-4.-BS-PDN-Process-Flow-Summary

    Backside Power Delivery as a Scaling Knob for Future Systems

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  • Virtual Fabrication and Advanced Process Control Improve Yield for SAQP Process Assessment with 16 nm Half-Pitch

    Read more - Virtual Fabrication and Advanced Process Control Improve Yield for SAQP Process Assessment with 16 nm Half-Pitch
    A-comparison-of-the-virtual-model-results-and-the-actual-Si-cross-sections_for-website

    Virtual Fabrication and Advanced Process Control Improve Yield for SAQP Process Assessment with 16 nm Half-Pitch

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  • CMOS Area Scaling and the Need for High Aspect Ratio Vias

    Read more - CMOS Area Scaling and the Need for High Aspect Ratio Vias
    SV_Characterization

    CMOS Area Scaling and the Need for High Aspect Ratio Vias

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  • Self-Aligned Block and Fully Self-Aligned Via for iN5 Metal 2 Self-Aligned Quadruple Patterning

    Read more - Self-Aligned Block and Fully Self-Aligned Via for iN5 Metal 2 Self-Aligned Quadruple Patterning

    Self-Aligned Block and Fully Self-Aligned Via for iN5 Metal 2 Self-Aligned Quadruple Patterning

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  • Modeling of Tone Inversion Process Flow for N5 Interconnect to Characterize Block Tip to Tip

    Read more - Modeling of Tone Inversion Process Flow for N5 Interconnect to Characterize Block Tip to Tip
    X-section representation of 2 level metal structure

    Modeling of Tone Inversion Process Flow for N5 Interconnect to Characterize Block Tip to Tip

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  • Understanding how small variations in photoresist shape significantly impact multi-patterning yield

    Read more - Understanding how small variations in photoresist shape significantly impact multi-patterning yield
    fin-patterning-for-FinFETs

    Understanding how small variations in photoresist shape significantly impact multi-patterning yield

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  • A million wafer, virtual fabrication approach to determine process capability requirements for an industry-standard N5 BEOL two-level metal flow

    Read more - A million wafer, virtual fabrication approach to determine process capability requirements for an industry-standard N5 BEOL two-level metal flow
    beol two level metal integration flow

    A million wafer, virtual fabrication approach to determine process capability requirements for an industry-standard N5 BEOL two-level metal flow

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