Cross-sections-perpendicular-to-the-fins
Self-aligned Fin Cut Last Patterning Scheme for Fin Arrays of 24nm Pitch and Beyond
April 11, 2019
SV_Characterization
CMOS Area Scaling and the Need for High Aspect Ratio Vias
February 8, 2019

Whitepaper: Virtual Fabrication and Advanced Process Control Improve Yield for SAQP Process Assessment with 16 nm Half-Pitch

To download your free white paper, please fill out the form below:

This paper uses Virtual Fabrication to assess the imec 7 nm node (iN7) Self-Aligned Quadruple Patterning (SAQP) integration scheme for the 16 nm half-pitch Metal 2 line formation. We first present the technical challenge of obtaining defect-free M2 lines with SAQP, and then provide a solution to achieve a <1% failure rate using a combination of Advanced Process Control and Virtual Fabrication.

© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Benjamin Vincent, S. Lariviere, C. Wilson, R. H. Kim, and J. Ervin "Virtual fabrication and advanced process control improve yield for SAQP process assessment with 16 nm half-pitch", Proc. SPIE 10963, Advanced Etch Technology for Nanopatterning VIII, 109630Q (20 March 2019); doi: 10.1117/12.2518099;

https://doi.org/10.1117/12.2518099

You might also be interested in:

Request Demo