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  • Pathfinding by process window modeling: Advanced DRAM capacitor patterning process window evaluation using virtual fabrication

    Read more - Pathfinding by process window modeling: Advanced DRAM capacitor patterning process window evaluation using virtual fabrication
    Figure 2. Virtual metrology results for minimum and maximum area.

    Pathfinding by process window modeling: Advanced DRAM capacitor patterning process window evaluation using virtual fabrication

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  • A Study of the Impact of Line Edge Roughness on Metal Line Resistance using Virtual Fabrication

    Read more - A Study of the Impact of Line Edge Roughness on Metal Line Resistance using Virtual Fabrication
    Figure 2: (a) Layout design, (b) Top view of a typical metal line generated, (c) cross sectional view of the metal line, (d) LER status of RMS and Correlation length split.

    A Study of the Impact of Line Edge Roughness on Metal Line Resistance using Virtual Fabrication

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  • A Triple-Deck CFET Structure with an Integrated SRAM Cell for the 2nm Technology Node and Beyond

    Read more - A Triple-Deck CFET Structure with an Integrated SRAM Cell for the 2nm Technology Node and Beyond
    fig-6-process-flow-for-separation-gate-of-pass-gate-transistor

    A Triple-Deck CFET Structure with an Integrated SRAM Cell for the 2nm Technology Node and Beyond

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  • A Study of Wiggling AA Modeling and its Impact on Device Performance in Advanced DRAM

    Read more - A Study of Wiggling AA Modeling and its Impact on Device Performance in Advanced DRAM
    wiggling AA figure

    A Study of Wiggling AA Modeling and its Impact on Device Performance in Advanced DRAM

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  • Impact of EUV Resist Thickness on Local Critical Dimension Uniformities for <30 nm CD Via Patterning

    Read more - Impact of EUV Resist Thickness on Local Critical Dimension Uniformities for <30 nm CD Via Patterning
    SOC_L

    Impact of EUV Resist Thickness on Local Critical Dimension Uniformities for <30 nm CD Via Patterning

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  • Backside Power Delivery as a Scaling Knob for Future Systems

    Read more - Backside Power Delivery as a Scaling Knob for Future Systems
    Figure-4.-BS-PDN-Process-Flow-Summary

    Backside Power Delivery as a Scaling Knob for Future Systems

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  • Self-aligned Fin Cut Last Patterning Scheme for Fin Arrays of 24nm Pitch and Beyond

    Read more - Self-aligned Fin Cut Last Patterning Scheme for Fin Arrays of 24nm Pitch and Beyond
    Cross-sections-perpendicular-to-the-fins

    Self-aligned Fin Cut Last Patterning Scheme for Fin Arrays of 24nm Pitch and Beyond

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  • Virtual Fabrication and Advanced Process Control Improve Yield for SAQP Process Assessment with 16 nm Half-Pitch

    Read more - Virtual Fabrication and Advanced Process Control Improve Yield for SAQP Process Assessment with 16 nm Half-Pitch
    A-comparison-of-the-virtual-model-results-and-the-actual-Si-cross-sections_for-website

    Virtual Fabrication and Advanced Process Control Improve Yield for SAQP Process Assessment with 16 nm Half-Pitch

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  • CMOS Area Scaling and the Need for High Aspect Ratio Vias

    Read more - CMOS Area Scaling and the Need for High Aspect Ratio Vias
    SV_Characterization

    CMOS Area Scaling and the Need for High Aspect Ratio Vias

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