Front-End-of-Line (FEOL) Archives | Coventor

A Benchmark Study of Complementary-Field Effect Transistor (CFET) Process Integration Options done by Virtual Fabrication
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A Benchmark Study of Complementary-Field Effect Transistor (CFET) Process Integration Options done by Virtual Fabrication
Impact of EUV Resist Thickness on Local Critical Dimension Uniformities for <30 nm CD Via Patterning
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Impact of EUV Resist Thickness on Local Critical Dimension Uniformities for <30 nm CD Via Patterning
Influence of SiGe on Parasitic Parameters in PMOS
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Influence of SiGe on Parasitic Parameters in PMOS
Self-aligned Fin Cut Last Patterning Scheme for Fin Arrays of 24nm Pitch and Beyond
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Self-aligned Fin Cut Last Patterning Scheme for Fin Arrays of 24nm Pitch and Beyond
Understanding the Effect of Variability in Bulk FinFET Device Performance
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Understanding the Effect of Variability in Bulk FinFET Device Performance
Design Technology Co-Optimization of 3D-monolithic standard cells and SRAM exploiting dynamic back-bias for ultra-low-voltage operation
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Design Technology Co-Optimization of 3D-monolithic standard cells and SRAM exploiting dynamic back-bias for ultra-low-voltage operation
Understanding how small variations in photoresist shape significantly impact multi-patterning yield
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Understanding how small variations in photoresist shape significantly impact multi-patterning yield
FinFET Front End of Line FEOL Process Integration
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FinFET Front End of Line FEOL Process Integration