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  • Pathfinding by process window modeling: Advanced DRAM capacitor patterning process window evaluation using virtual fabrication

    Read more - Pathfinding by process window modeling: Advanced DRAM capacitor patterning process window evaluation using virtual fabrication
    Figure 2. Virtual metrology results for minimum and maximum area.

    Pathfinding by process window modeling: Advanced DRAM capacitor patterning process window evaluation using virtual fabrication

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  • A Study of the Impact of Line Edge Roughness on Metal Line Resistance using Virtual Fabrication

    Read more - A Study of the Impact of Line Edge Roughness on Metal Line Resistance using Virtual Fabrication
    Figure 2: (a) Layout design, (b) Top view of a typical metal line generated, (c) cross sectional view of the metal line, (d) LER status of RMS and Correlation length split.

    A Study of the Impact of Line Edge Roughness on Metal Line Resistance using Virtual Fabrication

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  • Evaluating the Impact of STI Recess Profile Control on Advanced FinFET Device Performance

    Read more - Evaluating the Impact of STI Recess Profile Control on Advanced FinFET Device Performance
    Fig. 3: Leakage current distribution from different directions.

    Evaluating the Impact of STI Recess Profile Control on Advanced FinFET Device Performance

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  • The Effects of Poly Corner Etch Residue on Advanced FinFET Device Performance

    Read more - The Effects of Poly Corner Etch Residue on Advanced FinFET Device Performance
    Figure 3: On/off-state current distribution at fin bottom (top figures: no residue; bottom figure: with residue).

    The Effects of Poly Corner Etch Residue on Advanced FinFET Device Performance

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  • SVT (six stacked vertical transistors) SRAM cell architecture introduction: design and process challenges assessment

    Read more - SVT (six stacked vertical transistors) SRAM cell architecture introduction: design and process challenges assessment
    Figure 4: Four different process/design changes introduced for the second investigation path of SSVT-SRAM virtual fabrication.

    SVT (six stacked vertical transistors) SRAM cell architecture introduction: design and process challenges assessment

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  • A Triple-Deck CFET Structure with an Integrated SRAM Cell for the 2nm Technology Node and Beyond

    Read more - A Triple-Deck CFET Structure with an Integrated SRAM Cell for the 2nm Technology Node and Beyond
    fig-6-process-flow-for-separation-gate-of-pass-gate-transistor

    A Triple-Deck CFET Structure with an Integrated SRAM Cell for the 2nm Technology Node and Beyond

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  • Evaluation of the impact of source drain epi implementation on logic performance using combined process and circuit simulation

    Read more - Evaluation of the impact of source drain epi implementation on logic performance using combined process and circuit simulation

    Evaluation of the impact of source drain epi implementation on logic performance using combined process and circuit simulation

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  • Process Variation Analysis of Device Performance Using Virtual Fabrication: Methodology Demonstrated on a CMOS 14-nm FinFET Vehicle

    Read more - Process Variation Analysis of Device Performance Using Virtual Fabrication: Methodology Demonstrated on a CMOS 14-nm FinFET Vehicle
    Fig. 4. Model calibration based on TEM cross sections for (a) fin self-aligned double patterning, (b) source/drain epitaxial growth and contacts, and (c) gate-to-source/drains spacers.

    Process Variation Analysis of Device Performance Using Virtual Fabrication: Methodology Demonstrated on a CMOS 14-nm FinFET Vehicle

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  • Process Window Optimization of DRAM by Virtual Fabrication

    Read more - Process Window Optimization of DRAM by Virtual Fabrication

    Process Window Optimization of DRAM by Virtual Fabrication

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