FinFET and CFET Archives | Coventor

The Effects of Poly Corner Etch Residue on Advanced FinFET Device Performance
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The Effects of Poly Corner Etch Residue on Advanced FinFET Device Performance
A Triple-Deck CFET Structure with an Integrated SRAM Cell for the 2nm Technology Node and Beyond
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A Triple-Deck CFET Structure with an Integrated SRAM Cell for the 2nm Technology Node and Beyond
Evaluation of the impact of source drain epi implementation on logic performance using combined process and circuit simulation
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Evaluation of the impact of source drain epi implementation on logic performance using combined process and circuit simulation
Process Variation Analysis of Device Performance Using Virtual Fabrication: Methodology Demonstrated on a CMOS 14-nm FinFET Vehicle
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Process Variation Analysis of Device Performance Using Virtual Fabrication: Methodology Demonstrated on a CMOS 14-nm FinFET Vehicle
Process Model Calibration: The Key to Building Predictive and Accurate 3D Process Models
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Process Model Calibration: The Key to Building Predictive and Accurate 3D Process Models
A Benchmark Study of Complementary-Field Effect Transistor (CFET) Process Integration Options done by Virtual Fabrication
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A Benchmark Study of Complementary-Field Effect Transistor (CFET) Process Integration Options done by Virtual Fabrication
A Benchmark Study of Complementary-Field Effect Transistor (CFET) Process Integration Options: Comparing Bulk vs. SOI vs. DSOI Starting Substrates
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A Benchmark Study of Complementary-Field Effect Transistor (CFET) Process Integration Options: Comparing Bulk vs. SOI vs. DSOI Starting Substrates
Influence of SiGe on Parasitic Parameters in PMOS
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Influence of SiGe on Parasitic Parameters in PMOS
Self-aligned Fin Cut Last Patterning Scheme for Fin Arrays of 24nm Pitch and Beyond
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Self-aligned Fin Cut Last Patterning Scheme for Fin Arrays of 24nm Pitch and Beyond