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Self-Aligned Block and Fully Self-Aligned Via for iN5 Metal 2 Self-Aligned Quadruple Patterning

This paper assesses Self-Aligned Block (SAB) and Fully Self-Aligned Via (FSAV) approaches to patterning using a iN5 (imec node 5 nm) vehicle and Metal 2 Self-Aligned Quadruple Patterning. We analyze SAB printability in the lithography process using process optimization, and demonstrate the effect of SAB on patterning yield for a (8 M2 lines x 6 M1 lines x 6 Via) structure. We show that FSAV, compared to standard Via patterning, has no beneficial impact but prevents dielectric breakdown between two adjacent M1 lines.

Benjamin Vincent, Joern-Holger Franke, Aurelie Juncker, Frederic Lazzarino, Gayle Murdoch, Sandip Halder, Joseph Ervin“Self-Aligned Block and Fully Self-Aligned Via for iN5 Metal 2 Self-Aligned Quadruple Patterning”

https://doi.org/10.1117/12.2298761

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