Request White Paper: Self-aligned Fin Cut Last Patterning Scheme for Fin Arrays of 24nm Pitch and Beyond

In 5 nm FinFET technology and beyond, SRAM cell size reduction to 6 tracks is required with a fin pitch of 24 nm. Fin depopulation is mandatory to enable area scaling, but it becomes challenging at small pitches. In the first part of our study, we simulate a FinFET process flow with various fin cut approaches to obtain a 3D model of a FinFET SRAM device. Layout dependent effects on silicon and process non-idealities are characterized in a second part and used to calibrate the 3D model. In the third part of our work, a process sensitivity analysis is performed to compare the impact of overlay and CD variations on various fin cut options.

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S. Baudot, A. Soussou, A. P. Milenin, T. Hopf, S. Wang, P. Weckx, B. Vincent, J. Ervin, and S. Demuynck, “Self-aligned fin cut last patterning scheme for fin arrays of 24nm pitch and beyond”, Proc. SPIE 10960, Advances in Patterning Materials and Processes XXXVI, 109600N (25 March 2019); doi: 10.1117/12.2514927; https://doi.org/10.1117/12.2514927

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