September 23, 2020
Fig 5: ALD thickness dependence and layer etch. Using profiled anisotropic etching of the SiO2 (blue) and SiN (green), the resulting hole shape can be determined using varying ALD thicknesses. The best shape is found at a 23.5 nm ALD value, using a Semulator 3D visibility etch model that was previously validated again actual etch results.
Published by Timothy Yang at September 23, 2020
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Accelerating the Development of Dry Etch Processes during Feature Dependent Etch

In dry etching, the trajectory of accelerated ions is non-uniform and non-vertical, due to collisions with gas molecules and other random thermal effects (Figure 1). This has an impact on […]
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February 4, 2019
Wedge Cutaway and Schematic – 3D NAND Device
Published by Timothy Yang at February 4, 2019
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Innovative Solutions to Increase 3D NAND Flash Memory Density

3D NAND flash memory has enabled a new generation of non-volatile solid-state storage useful in nearly every electronic device imaginable. 3D NAND can achieve data densities exceeding those of 2D NAND […]
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