March 22, 2023
Figure 1a (left) displays the process of performing Physical Vapor Deposition (PVD), including Cu bombardment and filling of voids. Figure 1b (right) displays the process of performing Ion Beam Etch (IBE), including ion beam bombardment, mask shadowing and etch regions.
Published by Timothy Yang at March 22, 2023
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A Deposition and Etch Technique to Lower Resistance of Semiconductor Metal Lines

Introduction Cu’s resistivity depends on its crystal structure, void volume, grain boundaries and material interface mismatch, which becomes more significant at smaller scales.  The formation of Cu wires is traditionally […]
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October 27, 2021
Published by Timothy Yang at October 27, 2021
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Using Process Modeling to Enhance Device Uniformity during Self-Aligned Quadruple Patterning

Despite the growing interest in EUV lithography, self-aligned quadruple patterning (SAQP) still holds many technical advantages in pattern consistency, simplicity, and cost.  This is particularly true for very simple and […]
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September 23, 2020
Fig 5: ALD thickness dependence and layer etch. Using profiled anisotropic etching of the SiO2 (blue) and SiN (green), the resulting hole shape can be determined using varying ALD thicknesses. The best shape is found at a 23.5 nm ALD value, using a Semulator 3D visibility etch model that was previously validated again actual etch results.
Published by Timothy Yang at September 23, 2020
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Accelerating the Development of Dry Etch Processes during Feature Dependent Etch

In dry etching, the trajectory of accelerated ions is non-uniform and non-vertical, due to collisions with gas molecules and other random thermal effects (Figure 1). This has an impact on […]
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February 4, 2019
Wedge Cutaway and Schematic – 3D NAND Device
Published by Timothy Yang at February 4, 2019
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Innovative Solutions to Increase 3D NAND Flash Memory Density

3D NAND flash memory has enabled a new generation of non-volatile solid-state storage useful in nearly every electronic device imaginable. 3D NAND can achieve data densities exceeding those of 2D NAND […]
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